晶圆裸片-北京紫光青藤微系统有限公司

首页 ꄲ EEPROM ꄲ 晶圆裸片

晶圆裸片

未减薄划片的圆片可以直接提供客户，根据MAP图确定的EEPROM良品芯片（KGD）,

可以和客户的主芯片进行系统合封（SIP）。

产品列表 / PRODUCT LIST

Part No.	TH24C-64UA	TH24C-64UB	TH24C-128UA
Storage	64Kbit	64Kbit	128Kbit
Supply Range	1.7~5.5V	1.7~5.5V	1.7~5.5V
Temperature	-40℃~85℃	-40℃~85℃	-40℃~85℃
Interface	IIC	IIC	IIC
Flexible Architecture for Storage	Sequential & Random Read Features Page Write Modes, Partial Page Writes Allowed The device is organized as 8192 × 8bits memory array with 32- byte per page	Sequential & Random Read Features Page Write Modes, Partial Page Writes Allowed The device is organized as 8192 × 8bits memory array with 32- byte per page	Sequential & Random Read Features Page Write Modes, Partial Page Writes Allowed The device is organized as 16384 × 8bits memory array with 64- byte per page
Fast Read Speed	1 MHz clock from 2.5V to 5.5V 400KHz clock from 1.7V to 2.5V	1 MHz clock from 2.5V to 5.5V 400KHz clock from 1.7V to 2.5V	1 MHz clock from 2.5V to 5.5V 400KHz clock from 1.7V to 2.5V
Fast	5mS Page program time	5mS Page program time	5mS Page program time
Low Power Consumption	Read current 400uA, maximum Write current 2mA, maximum	Read current 400uA, maximum Write current 2mA, maximum	Read current 400uA, maximum Write current 2mA, maximum
High Reliability	Endurance: > 1 Million Write Cycles Data Retention: > 100 Years ESD Protection (HBM): >5KV	Endurance: > 1 Million Write Cycles Data Retention: > 100 Years ESD Protection (HBM): >5KV	Endurance: > 1 Million Write Cycles Data Retention: > 100 Years ESD Protection (HBM): >5KV
Package	KGD	KGD	KGD
Datasheet	Download	Download	Download