封装品-北京紫光青藤微系统有限公司

封装品

EEPROM电可擦除可编程只读存储器，是一种掉电后数据不丢失的存储芯片。紫光青藤EEPROM芯片具有可靠性高、擦写寿命长、封装形式丰富的特点。产品应用领域广阔，对消费级、工业级的应用需求，均可提供相应规格产品和技术支持。

产品列表 / PRODUCT LIST

Part No.	TH24C-64UA	TH24C-64UB	TH24C-128UA
Storage	64Kbit	64Kbit	128Kbit
Supply Range	1.7~5.5V	1.7~5.5V	1.7~5.5V
Temperature	-40℃~85℃	-40℃~85℃	-40℃~85℃
Interface	IIC	IIC	IIC
Flexible Architecture for Storage	Sequential & Random Read Features Page Write Modes, Partial Page Writes Allowed The device is organized as 8192 × 8bits memory array with 32- byte per page	Sequential & Random Read Features Page Write Modes, Partial Page Writes Allowed The device is organized as 8192 × 8bits memory array with 32- byte per page	Sequential & Random Read Features Page Write Modes, Partial Page Writes Allowed The device is organized as 16384 × 8bits memory array with 64- byte per page
Fast Read Speed	1 MHz clock from 2.5V to 5.5V 400KHz clock from 1.7V to 2.5V	1 MHz clock from 2.5V to 5.5V 400KHz clock from 1.7V to 2.5V	1 MHz clock from 2.5V to 5.5V 400KHz clock from 1.7V to 2.5V
Fast	5mS Page program time	5mS Page program time	5mS Page program time
Low Power Consumption	Read current 400uA, maximum Write current 2mA, maximum	Read current 400uA, maximum Write current 2mA, maximum	Read current 400uA, maximum Write current 2mA, maximum
High Reliability	Endurance: > 1 Million Write Cycles Data Retention: > 100 Years ESD Protection (HBM): >5KV	Endurance: > 1 Million Write Cycles Data Retention: > 100 Years ESD Protection (HBM): >5KV	Endurance: > 1 Million Write Cycles Data Retention: > 100 Years ESD Protection (HBM): >5KV
Package	PDIP-8, SOP-8, TSSOP-8, MSOP-8, DFN-8/UDFN-8, SOT23-5, TSOT23-5	4-balls WLCSP	PDIP-8, SOP-8, TSSOP-8, MSOP-8, DFN-8/UDFN-8, SOT23-5, TSOT23-5, 4-balls WLCSP
Datasheet	Download	Download	Download